BZD27B100P-E3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 100V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
50,000+
$0.08960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuits with the BZD27B100P-E3-18 Zener Diodes by Vishay General Semiconductor - Diodes Division, perfect for maintaining voltage stability in demanding environments. These diodes feature sharp breakdown characteristics, low leakage current, and high power dissipation, suitable for voltage regulation, overvoltage protection, and waveform clipping. Trusted by engineers worldwide, our Zener Diodes deliver unmatched performance. Interested in bulk orders or custom solutions? Reach out now for expert support and competitive pricing!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 100 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 200 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
onsemi
BZX84B7V5LT1G
Microchip Technology
JANTXV1N971DUR-1/TR
Comchip Technology
CZRF52C10
Nexperia USA Inc.
BZT52H-C3V9,115
Microchip Technology
JANTXV1N4371CUR-1/TR
Fairchild Semiconductor
BZX85C18-T50A-FS
Microchip Technology
1N4707/TR
Microchip Technology
JANTXV1N823-1/TR
Microchip Technology
1N5937PE3/TR8
Microchip Technology