BZD17C3V6P-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 800MW DO219AB
$0.15
Available to order
Reference Price (USD)
30,000+
$0.13862
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuits with the BZD17C3V6P-E3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division, perfect for maintaining voltage stability in demanding environments. These diodes feature sharp breakdown characteristics, low leakage current, and high power dissipation, suitable for voltage regulation, overvoltage protection, and waveform clipping. Trusted by engineers worldwide, our Zener Diodes deliver unmatched performance. Interested in bulk orders or custom solutions? Reach out now for expert support and competitive pricing!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 3.6 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): -
- Current - Reverse Leakage @ Vr: 100 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
CDLL4754
Microchip Technology
1N4751AUR/TR
Diodes Incorporated
MMBZ5236BT-7-F
Renesas Electronics America Inc
HZ24-2L-E
Nexperia USA Inc.
BZX585-C11,115
Vishay General Semiconductor - Diodes Division
GDZ30B-HE3-08
Vishay General Semiconductor - Diodes Division
GDZ3V9B-HG3-18
Microchip Technology
JAN1N4570AUR-1
Vishay General Semiconductor - Diodes Division
BZG05B33-HM3-18
NXP USA Inc.