BYVB32-200HE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 18A TO263AB
$0.94
Available to order
Reference Price (USD)
1+
$0.94050
500+
$0.931095
1000+
$0.92169
1500+
$0.912285
2000+
$0.90288
2500+
$0.893475
Exquisite packaging
Discount
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The BYVB32-200HE3_A/P from Vishay General Semiconductor - Diodes Division is a premium choice in the Discrete Semiconductor Products market, specifically within the Diodes - Rectifiers - Arrays category. These diodes are crafted to deliver exceptional efficiency and longevity, catering to a wide range of electronic applications. With features like high current capacity and thermal stability, the BYVB32-200HE3_A/P is ideal for automotive, industrial, and consumer electronics. Vishay General Semiconductor - Diodes Division ensures top-notch quality and performance in every unit. Get in touch with us today to discuss your requirements and request a sample!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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