BYM11-1000-E3/96
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO213AB
$0.48
Available to order
Reference Price (USD)
1,500+
$0.11880
3,000+
$0.10692
7,500+
$0.10098
10,500+
$0.09207
37,500+
$0.08613
75,000+
$0.08316
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve superior power conversion with BYM11-1000-E3/96 Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Vishay General Semiconductor - Diodes Division's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Microchip Technology
APT60D40SG
SMC Diode Solutions
SBL5100
Infineon Technologies
38DN06B02ELEMPRXPSA1
Microchip Technology
JANTX1N5811US
Micro Commercial Co
BAV103-TP
Rohm Semiconductor
RBR3MM40BTR
Panjit International Inc.
GS1004FL_R1_00001
GeneSiC Semiconductor
1N3889
Comchip Technology
US1G-HF
Rohm Semiconductor