BYM07-100HE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 500MA DO213
$0.14
Available to order
Reference Price (USD)
9,000+
$0.12772
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's BYM07-100HE3_A/I Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Microchip Technology
UES1003SM-1/TR
GeneSiC Semiconductor
1N2135A
Semtech Corporation
SM100
Microchip Technology
JANHCE1N5806
Renesas Electronics America Inc
RKP401KS#P1
Microchip Technology
S2580
Vishay General Semiconductor - Diodes Division
VS-245NQ015PBF
onsemi
NSR05201MX4T5G
Microchip Technology
JANTXV1N4148UBCCCP/TR
Microchip Technology