BYG23M-E3/TR3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A
$0.47
Available to order
Reference Price (USD)
7,500+
$0.12442
15,000+
$0.11743
37,500+
$0.11394
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's BYG23M-E3/TR3 Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Micro Commercial Co
FR3J-TP
Vishay General Semiconductor - Diodes Division
BAS40-00-G3-18
Vishay General Semiconductor - Diodes Division
V8PA12-M3/I
Infineon Technologies
D841S45TXPSA1
Diodes Incorporated
BAV21WSQ-7-F
Diodes Incorporated
DFLS240-7
Taiwan Semiconductor Corporation
31DF4
onsemi
MBR3100RLG
Diodes Incorporated
SBR12M120P5-13D
Vishay General Semiconductor - Diodes Division