Shopping cart

Subtotal: $0.00

BYG20J-M3/TR3

Vishay General Semiconductor - Diodes Division
BYG20J-M3/TR3 Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.5A
$0.15
Available to order
Reference Price (USD)
15,000+
$0.12880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

S3G-E3/9AT

Taiwan Semiconductor Corporation

SR304H

Diodes Incorporated

ES3AB-13-F

Solid State Inc.

1N1400R

Vishay General Semiconductor - Diodes Division

VS-6EWH06FNTR-M3

Diotec Semiconductor

SBX4045-3G

Rectron USA

FM4006-W

Microchip Technology

JANTX1N6620/TR

Comchip Technology

CDBA560-HF

Vishay General Semiconductor - Diodes Division

SS10PH10-M3/86A

Top