Shopping cart

Subtotal: $0.00

BYD17D,115

NXP USA Inc.
BYD17D,115 Preview
NXP USA Inc.
DIODE AVALANCHE 200V 1.5A MELF
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 21pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-87
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

10ETS12STRR

Vishay General Semiconductor - Diodes Division

GP30MHE3/54

Littelfuse Inc.

DK025L

Panjit International Inc.

SRT880XF_R1_00001

NXP USA Inc.

1PS59SB20,115

Taiwan Semiconductor Corporation

HS3G M6G

onsemi

MR754G

Comchip Technology

ACDBN160-HF

Taiwan Semiconductor Corporation

MBR1035HC0G

Diodes Incorporated

PR2004-T

Top