BUZ73ALHXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 5.5A TO220-3
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with BUZ73ALHXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BUZ73ALHXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
BUK7Y15-60EX
Infineon Technologies
IRFH7084TRPBF
Nexperia USA Inc.
PMZB320UPEYL
Alpha & Omega Semiconductor Inc.
AOB9N70L
onsemi
2SK4096LS
Nexperia USA Inc.
PSMN1R7-30YL,115
Toshiba Semiconductor and Storage
SSM6J212FE,LF
Littelfuse Inc.
LSIC1MO120E0080
Vishay Siliconix
SIHP25N40D-GE3
Vishay Siliconix