BUT12AI,127
NXP USA Inc.
NXP USA Inc.
TRANS NPN 450V 8A TO220AB
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Experience superior performance with BUT12AI,127 from NXP USA Inc., a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, BUT12AI,127 is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 860mA, 5A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
- Power - Max: 110 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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