BUK9Y12-80E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V LFPAK56 PWR-SO8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BUK9Y12-80E,115 by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BUK9Y12-80E,115 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IRF5305SPBF
Infineon Technologies
IRL3714TR
Vishay General Semiconductor - Diodes Division
VS-FA38SA50LCP
Infineon Technologies
SPB160N04S2L03DTMA1
onsemi
NTR4501NT3
Renesas Electronics America Inc
NP90N04MUG-S18-AY
Infineon Technologies
IPI80N08S207AKSA1
Infineon Technologies
IRFR2905ZTRL
Vishay Siliconix
SI4466DY-T1-GE3
Infineon Technologies