BUK9515-100A127
NXP USA Inc.
NXP USA Inc.
N-CHANNEL POWER MOSFET
$0.95
Available to order
Reference Price (USD)
1+
$0.95000
500+
$0.9405
1000+
$0.931
1500+
$0.9215
2000+
$0.912
2500+
$0.9025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of BUK9515-100A127, a premium Transistors - FETs, MOSFETs - Single from NXP USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BUK9515-100A127 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STWA75N60DM6
onsemi
NTMFS4839NHT3G
Rectron USA
RM60P04Y
Alpha & Omega Semiconductor Inc.
AOT482L
Diodes Incorporated
ZXMP7A17GQTC
Fairchild Semiconductor
FQAF19N20
Alpha & Omega Semiconductor Inc.
AOD4S60
Toshiba Semiconductor and Storage
TPWR6003PL,L1Q
Infineon Technologies
IPP65R045C7XKSA1
IXYS