BUK9107-55ATE,118
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA BUK9107-55ATE -
$1.04
Available to order
Reference Price (USD)
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$1.04000
500+
$1.0296
1000+
$1.0192
1500+
$1.0088
2000+
$0.9984
2500+
$0.988
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BUK9107-55ATE,118 by NXP USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BUK9107-55ATE,118 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 5836 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 272W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-426
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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