BUK751R8-40E,127
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 120A TO220AB
$0.94
Available to order
Reference Price (USD)
1+
$0.93600
500+
$0.92664
1000+
$0.91728
1500+
$0.90792
2000+
$0.89856
2500+
$0.8892
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BUK751R8-40E,127 by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BUK751R8-40E,127 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Taiwan Semiconductor Corporation
TSM70N380CI C0G
Nexperia USA Inc.
BUK9M17-30EX
Diodes Incorporated
DMN65D8LW-7
Rohm Semiconductor
RD3H045SPTL1
Goford Semiconductor
G70P02K
NXP USA Inc.
PMN38EN,135
Inventchip
IV1Q12050T3
Panjit International Inc.
PJA3439-AU_R1_000A1
Diodes Incorporated
DMT3020LFDF-7
Sanken