BUK6D385-100EX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 1.4A/3.7A 6DFN
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BUK6D385-100EX by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BUK6D385-100EX ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 15W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
Rohm Semiconductor
R8011KNXC7G
Diodes Incorporated
DMJ70H1D3SK3-13
Infineon Technologies
ISC0703NLSATMA1
Diodes Incorporated
DMP21D0UFB-7
Infineon Technologies
IRFU7540PBF
STMicroelectronics
STL60P4LLF6
IXYS
IXFP34N65X3
onsemi
2N7000-D74Z
IXYS
IXFX170N20T
Micro Commercial Co