BUK6D230-80EX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 1.9A/5.1A 6DFN
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BUK6D230-80EX by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BUK6D230-80EX inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 15W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
onsemi
FDP61N20
Vishay Siliconix
SQ3418AEEV-T1_BE3
Rohm Semiconductor
RZQ050P01TR
Panjit International Inc.
PJD2NA60_R2_00001
Vishay Siliconix
SQJA60EP-T1_GE3
Vishay Siliconix
IRFBC40ASTRLPBF
Infineon Technologies
IPP70N10S3L12AKSA1
Vishay Siliconix
SIHH14N65EF-T1-GE3
Vishay Siliconix
IRFBC20PBF
Vishay Siliconix