BUJ403A/DG,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ403A - POWER BIPOL
$0.40
Available to order
Reference Price (USD)
5,000+
$0.34020
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust BUJ403A/DG,127 by NXP USA Inc. for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, BUJ403A/DG,127 ensures reliability. Get in touch today to request a quote and see why NXP USA Inc. is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 550 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
Related Products
onsemi
PN2222TF
onsemi
MSD42WT1G
Rohm Semiconductor
2SD1898T100R
NXP Semiconductors
PMZ1000UN,315
NTE Electronics, Inc
NTE130
Central Semiconductor Corp
TIP112 TIN/LEAD
Renesas Electronics America Inc
2SA952-A
onsemi
SMMJT350T3G
Nexperia USA Inc.
BC807-25QCZ
Diodes Incorporated