BTS131E3045ANTMA1
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$6.88
Available to order
Reference Price (USD)
1+
$6.88000
500+
$6.8112
1000+
$6.7424
1500+
$6.6736
2000+
$6.6048
2500+
$6.536
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BTS131E3045ANTMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BTS131E3045ANTMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Infineon Technologies
AUIRF1010ZSTRL
Nexperia USA Inc.
PXP015-30QLJ
Vishay Siliconix
SIHF15N65E-GE3
STMicroelectronics
STP4LN80K5
Alpha & Omega Semiconductor Inc.
AON6280
Renesas Electronics America Inc
UPA2718GR-E1-AT
IXYS
IXFN280N085
Sanken
EKI10126
Wolfspeed, Inc.
C3M0021120D
Rectron USA