BSS87H6327FTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 240V 260MA SOT89-4
$0.69
Available to order
Reference Price (USD)
1,000+
$0.20704
2,000+
$0.19045
5,000+
$0.17939
10,000+
$0.16834
25,000+
$0.16060
50,000+
$0.15980
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSS87H6327FTSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSS87H6327FTSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89-4-2
- Package / Case: TO-243AA
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