BSS123W-7-F
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT323
$0.42
Available to order
Reference Price (USD)
3,000+
$0.08160
6,000+
$0.07412
15,000+
$0.06664
30,000+
$0.06290
75,000+
$0.05654
150,000+
$0.05467
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BSS123W-7-F by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSS123W-7-F ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
STMicroelectronics
STB10LN80K5
Vishay Siliconix
SIHA25N50E-E3
Toshiba Semiconductor and Storage
TK12Q60W,S1VQ
Infineon Technologies
IPB80N03S4L03
Diodes Incorporated
DMP6023LEQ-13
Vishay Siliconix
SI2309CDS-T1-GE3
Nexperia USA Inc.
BUK9M42-60EX
Vishay Siliconix
IRFPF50PBF
Renesas Electronics America Inc
TBB1005EMTL-H
onsemi