BSR316PH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 100V 360MA SC59
$0.68
Available to order
Reference Price (USD)
3,000+
$0.17272
6,000+
$0.16157
15,000+
$0.15043
30,000+
$0.14263
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSR316PH6327XTSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSR316PH6327XTSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 360mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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