BSR202NL6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 3.8A SC59
$0.69
Available to order
Reference Price (USD)
3,000+
$0.17135
6,000+
$0.16030
15,000+
$0.14924
30,000+
$0.14150
Exquisite packaging
Discount
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Boost your electronic applications with BSR202NL6327HTSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSR202NL6327HTSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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