BSM50GD120DN2BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2A-211
$219.22
Available to order
Reference Price (USD)
1+
$219.22000
500+
$217.0278
1000+
$214.8356
1500+
$212.6434
2000+
$210.4512
2500+
$208.259
Exquisite packaging
Discount
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Infineon Technologies's BSM50GD120DN2BPSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 72 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2A