BSM15GP120B2BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V
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Infineon Technologies's BSM15GP120B2BOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 180 W
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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