BSM150GB170DN2E3256HDLA1
Infineon Technologies
Infineon Technologies
BSM150GB170DN2 - INSULATED GATE
$103.40
Available to order
Reference Price (USD)
1+
$103.40000
500+
$102.366
1000+
$101.332
1500+
$100.298
2000+
$99.264
2500+
$98.23
Exquisite packaging
Discount
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Discover high-performance BSM150GB170DN2E3256HDLA1 IGBT Modules from Infineon Technologies, designed for robust power management in industrial applications. These modules feature advanced thermal management, high voltage tolerance, and efficient switching capabilities, making them ideal for motor drives, renewable energy systems, and power supplies. Upgrade your systems with reliable Infineon Technologies technology. Contact us today for a quote!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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