BSM080D12P2C008
Rohm Semiconductor
Rohm Semiconductor
SIC POWER MODULE-1200V-80A
$382.48
Available to order
Reference Price (USD)
1+
$301.74000
12+
$297.48583
Exquisite packaging
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The BSM080D12P2C008 by Rohm Semiconductor is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Rohm Semiconductor s BSM080D12P2C008 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 13.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
- Power - Max: 600W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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