BSL308CH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
$0.82
Available to order
Reference Price (USD)
3,000+
$0.23925
6,000+
$0.22275
15,000+
$0.21450
30,000+
$0.21000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSL308CH6327XTSA1 from Infineon Technologies is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, BSL308CH6327XTSA1 delivers consistent quality. Contact us now to learn more and secure your supply of Infineon Technologies s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
- Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
Related Products
onsemi
NTLJD3115PTAG
Diodes Incorporated
DMT3020LSDQ-13
Nexperia USA Inc.
PMDXB600UNEZ
Infineon Technologies
IPG20N06S2L50AATMA1
Advanced Linear Devices Inc.
ALD212908APAL
Texas Instruments
CSD75301W1015
Diodes Incorporated
DMN601VK-7
Diodes Incorporated
DMN5L06DMK-7
Vishay Siliconix
SI1926DL-T1-GE3
Diodes Incorporated