BSH207,135
NXP USA Inc.
NXP USA Inc.
MOSFET P-CH 12V 1.52A 6TSOP
$0.27
Available to order
Reference Price (USD)
1+
$0.27000
500+
$0.2673
1000+
$0.2646
1500+
$0.2619
2000+
$0.2592
2500+
$0.2565
Exquisite packaging
Discount
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Boost your electronic applications with BSH207,135, a reliable Transistors - FETs, MOSFETs - Single by NXP USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSH207,135 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.52A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 9.6 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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