BSH202,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 520MA TO236AB
$0.40
Available to order
Reference Price (USD)
3,000+
$0.12390
6,000+
$0.11730
15,000+
$0.11070
30,000+
$0.10278
75,000+
$0.09948
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of BSH202,215, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSH202,215 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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