BSD840N L6327
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 20V 0.88A SOT363
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The BSD840N L6327 from Infineon Technologies is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, BSD840N L6327 delivers consistent quality. Contact us now to learn more and secure your supply of Infineon Technologies s premium semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 880mA
- Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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Infineon Technologies