BSD316SNL6327XT
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 1.4A SOT363-6
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of BSD316SNL6327XT, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSD316SNL6327XT is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-PO
- Package / Case: 6-VSSOP, SC-88, SOT-363
Related Products
Diodes Incorporated
DMN1032UCB4-7
Diodes Incorporated
DMN2058UW-7
Vishay Siliconix
SIR826BDP-T1-RE3
Vishay Siliconix
SQA470EJ-T1_GE3
Diodes Incorporated
DMNH4005SCT
STMicroelectronics
STB33N60DM2
onsemi
FDS6681Z
IXYS
IXTH3N100P
Vishay Siliconix
SQM120N03-1M5L_GE3
Taiwan Semiconductor Corporation