BSD235N L6327
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 20V 0.95A SOT363
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSD235N L6327 by Infineon Technologies is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Infineon Technologies s BSD235N L6327 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 950mA
- Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
Related Products
Trinamic Motion Control GmbH
TMC1620-TO
onsemi
MCH6663-TL-H
Vishay Siliconix
SI1563EDH-T1-GE3
Vishay Siliconix
SI5511DC-T1-GE3
onsemi
HUF76407DK8T
Vishay Siliconix
SI4226DY-T1-E3
Infineon Technologies
IRF5851
Infineon Technologies
BSL314PEH6327XTSA1
Vishay Siliconix
SQJ941EP-T1-GE3
Panasonic Electronic Components