BSC340N08NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 7A/23A TDSON-8-5
$1.06
Available to order
Reference Price (USD)
5,000+
$0.30368
10,000+
$0.29371
25,000+
$0.28827
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BSC340N08NS3GATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSC340N08NS3GATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FQP65N06
Alpha & Omega Semiconductor Inc.
AOD2910
onsemi
MTD6N10E1
Vishay Siliconix
IRLZ14PBF-BE3
IXYS
IXFN38N100Q2
Nexperia USA Inc.
BUK9M15-60EX
STMicroelectronics
STD13N65M2
Infineon Technologies
IPA60R180C7XKSA1
onsemi
HUF75639P3-F102
Rohm Semiconductor