BSC022N03S
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 28A/100A TDSON
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC022N03S by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC022N03S inquire now for more details!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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