BSB015N04NX3GXUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 36A/180A 2WDSON
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Reference Price (USD)
5,000+
$1.52909
Exquisite packaging
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Infineon Technologies presents BSB015N04NX3GXUMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSB015N04NX3GXUMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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