BLT80,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 10V 900MHZ SOT223
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Simplify your RF design challenges with BLT80,115 from NXP USA Inc.. These BJT transistors offer consistent hFE matching and low saturation voltage, essential for push-pull configurations and mixer circuits. Serving industries from marine navigation to renewable energy. Connect with our team we provide end-to-end support from selection to delivery!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 900MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 150mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SC-73
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