BLT70,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 8V 900MHZ SOT223
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Maximize signal clarity with BLT70,115 RF BJT transistors by NXP USA Inc.. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 900MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 2.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 4.8V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SC-73
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