BLF6G22LS-100,118
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 18.2DB SOT502B
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance BLF6G22LS-100,118 RF MOSFETs from Ampleon USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 18.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 29A
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 25W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
Related Products
Infineon Technologies
BG3130RE6327BTSA1
onsemi
2N5952_D75Z
STMicroelectronics
LET9150
Ampleon USA Inc.
BLA6G1011-200R,112
CEL
NE3513M04-A
STMicroelectronics
LET16060C
Infineon Technologies
PTFA210701EV4XWSA1
NXP USA Inc.
MRF6S9125NR1
Ampleon USA Inc.
BLF988,112
NXP USA Inc.