BLF10H6600P112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT539 (
$220.03
Available to order
Reference Price (USD)
1+
$220.03000
500+
$217.8297
1000+
$215.6294
1500+
$213.4291
2000+
$211.2288
2500+
$209.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with BLF10H6600P112 from NXP USA Inc., a trusted name in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single are engineered for efficiency and durability, featuring fast switching speeds and robust construction. Ideal for use in audio amplifiers, signal processing, and more, BLF10H6600P112 ensures top-tier performance. Don't miss out on this exceptional component reach out to us today for more details and pricing.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
2SC4641T-AA
Microchip Technology
JAN2N3421P
Microchip Technology
JANSR2N5152
Microchip Technology
2N4070
Fairchild Semiconductor
KSC10080BU
Microchip Technology
2N3440U4
Microchip Technology
HS2222ATX/TR
Microchip Technology
2N7369
onsemi
2SB1216T-TL-H
Microchip Technology