BLA1011-200
Ampleon USA Inc.
Ampleon USA Inc.
OXIDE SEMICONDUCTOR FET
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Unlock next-gen RF performance with BLA1011-200 from Ampleon USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 1.03GHz ~ 1.09GHz
- Gain: 13dB
- Voltage - Test: 36 V
- Current Rating (Amps): 1µA
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 200W
- Voltage - Rated: 75 V
- Package / Case: SOT-502A
- Supplier Device Package: SOT502A
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