BG5120KE6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH DUAL 8V 20MA SOT-363
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Upgrade your RF designs with Infineon Technologies's BG5120KE6327HTSA1 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 23dB
- Voltage - Test: 5 V
- Current Rating (Amps): 20mA
- Noise Figure: 1.1dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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