BFU580GX
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT223
$0.83
Available to order
Reference Price (USD)
1,000+
$0.40700
2,000+
$0.37400
5,000+
$0.35200
10,000+
$0.34760
Exquisite packaging
Discount
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Discover high-performance BFU580GX RF Bipolar Transistors from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
- Gain: 10.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SC-73
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