BFR193L3E6327XTMA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ TSLP-3-1
$0.58
Available to order
Reference Price (USD)
15,000+
$0.11223
30,000+
$0.10294
75,000+
$0.09907
105,000+
$0.09520
Exquisite packaging
Discount
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Infineon Technologies's BFR193L3E6327XTMA1 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 12.5dB ~ 19dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3-1
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