BFP720FE6327
Infineon Technologies
Infineon Technologies
RF TRANSISTOR, X BAND, NPN
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's BFP720FE6327 RF BJT transistors offer unmatched reliability for critical communication systems. With optimized noise figures and power handling, they excel in cellular base stations, satellite receivers, and IoT devices. Their robust construction ensures longevity even in harsh environments. Ready to integrate top-tier components? Request a quote today and let us support your RF engineering goals!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
- Gain: 10.5dB ~ 28dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
Related Products
onsemi
NSVMMBTH81LT1G
Microchip Technology
2N2369
NXP USA Inc.
BLT81
Rochester Electronics, LLC
MX0912B251Y
Renesas Electronics America Inc
UPA901TU-T3-A
Renesas Electronics America Inc
NESG2031M05-T1-A
Fairchild Semiconductor
KSC1393YTA
Infineon Technologies
BFP 405 H6740
Microchip Technology
2N3497
Renesas Electronics America Inc