BFN18E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 300V 0.2A SOT89
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Choose BFN18E6327HTSA1 by Infineon Technologies for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BFN18E6327HTSA1 is a versatile solution. Ready to order? Submit your inquiry today and let Infineon Technologies provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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