BF421,112
NXP USA Inc.
NXP USA Inc.
TRANS PNP 300V 0.05A TO92-3
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Choose BF421,112 by NXP USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BF421,112 is a versatile solution. Ready to order? Submit your inquiry today and let NXP USA Inc. provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
- Power - Max: 830 mW
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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