BF1208,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH DUAL GATE SOT666
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Unlock next-gen RF performance with BF1208,115 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 32dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1.3dB
- Current - Test: 19 mA
- Power - Output: -
- Voltage - Rated: 6 V
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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