BD809G
onsemi
onsemi
TRANS NPN 80V 10A TO220
$0.00
Available to order
Reference Price (USD)
1+
$0.91000
50+
$0.77180
100+
$0.63390
500+
$0.52368
1,000+
$0.41344
Exquisite packaging
Discount
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Choose BD809G by onsemi for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BD809G is a versatile solution. Ready to order? Submit your inquiry today and let onsemi provide the components you need.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
- Current - Collector Cutoff (Max): 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
- Power - Max: 90 W
- Frequency - Transition: 1.5MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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