BCR503E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 50V SOT23-3
$0.54
Available to order
Reference Price (USD)
3,000+
$0.07606
6,000+
$0.06687
15,000+
$0.05767
30,000+
$0.05460
75,000+
$0.05154
150,000+
$0.04643
Exquisite packaging
Discount
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The BCR503E6327HTSA1 by Infineon Technologies is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. Infineon Technologies ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100 MHz
- Power - Max: 330 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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