BCR198E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 50V SOT23-3
$0.35
Available to order
Reference Price (USD)
3,000+
$0.03647
6,000+
$0.03171
15,000+
$0.02695
30,000+
$0.02537
75,000+
$0.02378
150,000+
$0.02114
Exquisite packaging
Discount
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The BCR198E6327HTSA1 by Infineon Technologies is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Infineon Technologies stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 190 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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